Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:"> Ultra-Flat 4" Silicon Wafers Topcon All cantilevers have less than – www.gracedental.ae
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Ultra-Flat 4" Silicon Wafers Topcon All cantilevers have less than

SKU: 57157859421

4.1
USD171.25 USD209.25

Pay in 4 interest-free payments of $42.81 Learn more

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Ships within 48 hours · Estimated delivery Aug 31 - Sep 5

Description

All cantilevers have less than +/- 2 deg bend

charged surfaces: Portmann

The microprocessor controlled system also offers full manual control for all parameters and an advanced protocol programming feature for custom designed glow discharge applications

Size: 51 x 71mm (2" x 2

Hydrophobic coating offers novel platform for deposition and growth of nanomaterials

Ultra-Flat 4" Silicon Wafers Topcon All cantilevers have less thanDESCRIPTION Ultra Flat 4" Silicon Wafer for demanding substrate studies. Can also be used as substrate for AFM or SEM samples by dicing the wafer into smaller pieces using a Scriber and the Wafer Cleaving Glass Breaking Pliers. The 4" ultra flat silicon wafer is shipped in a 4" wafer carrier. Properties for 4" (100mm) Ultra Flat Wafer: Orientation: <100> Type Dopant: P Boron Grade: Prime CZ Virgin Resistivity: 10 20 Ohm cm Thickness: 525m + 20m TTV:

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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